SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: KAWASAKI ATSUKO, YOSHIDA TAKAMITSU, UTSUMI KUNIAKI, TANIDA KAZUMA
• Format: Patent
• Language: English; Japanese
• Published: 01.02.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor device manufacturing method which can improve yield even when an attachment surface of an insulation layer provided on an attachment surface of a substrate and an attachment surface of an electrode embedded in the insulation layer are not flush with each other in the case where chips in each of which a semiconductor element and an integrated circuit are formed are attached to a substrate in a multi-layered fashion.SOLUTION: According to an embodiment, a semiconductor device is provided. The semiconductor device comprises an insulation layer, an electrode and a trench. The insulation layer is provided on a surface of a substrate. The electrode is embedded in the insulation layer and one end face is exposed from the insulation layer. Alternatively, the electrode embedded in the insulation layer is provided in a manner such that the one end face protrudes from the surface of the insulation layer.SELECTED DRAWING: Figure 4 【課題】基板に半導体素子や集積回路が形成されたチップを多段に貼合する場合に、基板の貼合面に設けられる絶縁層の貼合面と、絶縁層に埋設される電極の貼合面とが面一となっていない場合であっても、歩留まりを向上させることができる半導体装置および半導体装置の製造方法を提供すること。【解決手段】一つの実施形態によれば、半導体装置が提供される。半導体装置は、絶縁層と、電極と、溝とを備える。絶縁層は、基板の表面に設けられる。電極は、絶縁層に埋設されて一方の端面が絶縁層から露出する。また、絶縁層に埋設される電極は、一方の端面が絶縁層の表面から突出するように設けられる。【選択図】図４