SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Author: HAMADA KOJI
• Format: Patent
• Language: English; Japanese
• Published: 01.02.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a decrease in threshold voltage and transient electron diffusion caused by potential variation of an adjacent gate electrode.SOLUTION: A semiconductor device comprises: a semiconductor substrate including a first surface and a second surface on the side opposite to the first surface; a first transistor including a first gate electrode arranged in the semiconductor substrate; and a first conductor arranged in the semiconductor substrate. The first gate electrode is applied with at least first electric potential and second electric potential higher than the first electric potential. A first end part on the first surface side of the first conductor is located in a position more away from the first surface of the semiconductor substrate than a first end part on the second surface side of the first gate electrode. The third electric potential applied to the first conductor is lower than the second electric potential.SELECTED DRAWING: Figure 2 【課題】閾値電圧の低下を抑制すると共に、隣接するゲート電極の電位変動に起因する過渡的な電子拡散を抑制する半導体装置を提供すること。【解決手段】半導体装置は、第１面及び第１面とは反対側の第２面を有する半導体基板と、半導体基板内に配された第１のゲート電極を有する第１のトランジスタと、半導体基板内に配された第１の導電体と、を備える。第１のゲート電極は、少なくとも第１の電位および第１の電位よりも高い第２の電位が印加される。第１の導電体の第１面側の第１の端部は、第１のゲート電極の第２面側の第１の端部よりも半導体基板の第１の面から離れた位置にある。第１の導電体に印加される第３の電位は、第２の電位よりも低い。【選択図】図２