SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can sufficiently improve channel mobility.SOLUTION: A semiconductor device manufacturing method comprises the steps of: exposing a surface layer of a silicon carbide group part 11 of a wafer W in a halogen atmosphere...

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Main Authors OUCHI KENJI, MORISHIMA MASAHITO, WATABE HEIJI, SHINONOME SHUJI, KATO DAIKI, HOSOI TAKUJI, SHIMURA TAKAYOSHI
Format Patent
LanguageEnglish
Japanese
Published 28.01.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can sufficiently improve channel mobility.SOLUTION: A semiconductor device manufacturing method comprises the steps of: exposing a surface layer of a silicon carbide group part 11 of a wafer W in a halogen atmosphere containing fluorine dissociated from a silicon tetrafluoride gas by plasma; and forming a gate insulation film 15 on the exposed surface layer. 【課題】チャネルの移動度を十分に改善することができる半導体デバイスの製造方法を提供する。【解決手段】ウエハＷにおける炭化硅素基部１１の表層を、四フッ化硅素ガスからプラズマによって解離したフッ素を含むハロゲン雰囲気に暴露し、該暴露された表層の上にゲート絶縁膜１５を形成する。【選択図】図２
Bibliography:Application Number: JP20140136918