SEMICONDUCTOR DEVICE

• Main Authors: AKITA KATSUSHI, KYONO TAKASHI, ARIKATA SUGURU
• Format: Patent
• Language: English; Japanese
• Published: 18.01.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device that has a light-receiving layer including a distortion compensation layer that can sufficiently suppress generation of lattice relaxation while maintaining a good surface quality.SOLUTION: An infrared light receiving element 1 that is a semiconductor device comprises: a substrate; a buffer layer formed of GaSb; and a light-receiving layer including a multiquantum well structure. The multiquantum well structure is configured by repeating a unit structure 41 consisting of a plurality of element layers a plurality of times. The unit structure 41 includes a first element layer 71 formed of InAsSb, a second element layer 72 formed of GaSb, and a third element layer 73 formed of InSbAs. The third element layer 73 is arranged so as to be contacted with one principal surface 72A of the second element layer 72. The other principal surface 72B of the second element layer 72 is contacted with the first element layer 71 in the unit structure 41. A value of a is 0 or more and 0.05 or less, and a value of x is greater than 0 and less than 1, and a thickness of the third element layer 73 is 0.1 nm or more and 0.9 nm or less. 【課題】良好な表面性状を維持しつつ格子緩和の発生を十分に抑制可能な歪み補償層を含む受光層を備えた半導体装置を提供する。【解決手段】半導体装置である赤外線受光素子１は基板と、ＧａＳｂからなるバッファ層と、多重量子井戸構造を含む受光層と、を備える。多重量子井戸構造は、複数の要素層からなる単位構造４１が複数回繰り返されて構成される。単位構造４１は、ＩｎＡｓ１−ａＳｂａからなる第１要素層７１と、ＧａＳｂからなる第２要素層７２と、ＩｎＳｂｘＡｓ１−ｘからなる第３要素層７３と、を含む。第３要素層７３は第２要素層７２の一方の主面７２Ａに接触するように配置される。第２要素層７２の他方の主面７２Ｂは、この単位構造４１内の第１要素層７１に接触する。上記ａの値は０以上０．０５以下、上記ｘの値は０を超え１未満、第３要素層７３の厚みは０．１ｎｍ以上０．９ｎｍ以下である。【選択図】図２