PHOTO-DESTROYABLE QUENCHER AND ASSOCIATED PHOTORESIST COMPOSITION, AND METHOD FOR FORMING DEVICE

PROBLEM TO BE SOLVED: To provide a photo-destroyable quencher that exhibits increased dissolution stability and decreased hygroscopic properties relative to triphenylsulfonium phenolate, and a photoresist composition containing a photo-destroyable quencher exhibiting increased contrast and/or increa...

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Bibliographic Details
Main Author PAUL J LABEAUME
Format Patent
LanguageEnglish
Japanese
Published 14.01.2016
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Summary:PROBLEM TO BE SOLVED: To provide a photo-destroyable quencher that exhibits increased dissolution stability and decreased hygroscopic properties relative to triphenylsulfonium phenolate, and a photoresist composition containing a photo-destroyable quencher exhibiting increased contrast and/or increased critical dimension uniformity.SOLUTION: The photo-destroyable quencher has a structure of the formula. In the formula, at least one of R, R, R, Rand Ris a halogen, nitro, 1-12C fluorinated alkyl, cyano, aldehyde, 2-20C ester, 2-20C ketone, 1-20C sulfoxyl hydrocarbyl, 1-20C sulfonyl hydrocarbyl, or sulfonamide. 【課題】トリフェニルスルホニウムフェノラートに対して改良された溶解安定性及び減少した吸湿特性を示す光分解性消光剤、及び、向上したコントラスト及び/又は向上した限界寸法均一性を示す光分解性消光剤を含むフォトレジスト組成物を提供する。【解決手段】下記式の構造を有する光分解性消光剤。式中、R2、R3、R4、R5,及びR6の少なくとも1つはハロゲン、ニトロ、C1−12フッ素化アルキル、シアノ、アルデヒド,C2−20エステル、C2−20ケトン,C1−20スルホキシルヒドロカルビル,C1−20スルホニルヒドロカルビル、又はスルホンアミドである。【選択図】なし
Bibliography:Application Number: JP20150097067