GAS BARRIER FILM, FILM SUBSTRATE WITH GAS BARRIER FILM, AND ELECTRONIC DEVICE WITH THE GAS BARRIER FILM

PROBLEM TO BE SOLVED: To provide a gas barrier film capable of achieving high gas barrier properties and high bending resistance.SOLUTION: A gas barrier film 10 has a multilayer structure where a first barrier layer 11 made of a first inorganic material and a second barrier material 12 made of a sec...

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Bibliographic Details
Main Authors OKUMOTO KENJI, SHIBATA MASAOMI, SAKAMOTO GOSUKE
Format Patent
LanguageEnglish
Japanese
Published 14.01.2016
Subjects
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Summary:PROBLEM TO BE SOLVED: To provide a gas barrier film capable of achieving high gas barrier properties and high bending resistance.SOLUTION: A gas barrier film 10 has a multilayer structure where a first barrier layer 11 made of a first inorganic material and a second barrier material 12 made of a second inorganic material different from the first inorganic material are alternately laminated. The multilayer structure includes two or more first barrier layers 11. The first inorganic material is aluminum oxide. Each first barrier layer 11 has a film thickness of 3 nm or more, and the total film thickness of the first barrier layers 11 is 20 nm or less. Both the first barrier layer and the second barrier layer are formed using an atomic layer deposition method. 【課題】高いガスバリア性および高い曲げ耐性を実現可能なガスバリア膜を提供する。【解決手段】ガスバリア膜10は、第1の無機材料からなる第1のバリア層11と第1の無機材料とは異なる第2の無機材料からなる第2のバリア層12とが交互に積層された多層構造を備える。多層構造は、第1のバリア層11を2層以上有する。第1の無機材料は、酸化アルミニウムである。第1のバリア層11は、それぞれ3nm以上の膜厚を有し、第1のバリア層11の総膜厚が、20nm以下であり、第1のバリア層および第2のバリア層が、何れも原子層堆積法を用いて形成されている。【選択図】図1
Bibliography:Application Number: JP20150099016