SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

• Main Authors: IZUMI MANABU, WADA YUICHI, TATENO HIDETO, USHIDA TAKURO, ASHIHARA YOJI, YAMAZAKI YOSHINOBU, NAKAMURA IWAO
• Format: Patent
• Language: English; Japanese
• Published: 24.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a technique capable of improving manufacturing quality of a semiconductor device and improving manufacturing throughput.SOLUTION: The substrate processing apparatus includes: a processing container for accommodating a substrate; a first heating part for heating the substrate accommodated in the processing container; a gas generation part for generating a processing gas; a gas introduction pipe for introducing the processing gas into the processing container from the gas generating part; and a second heating part, disposed outside the processing container, for heating a connection part of the gas introduction part and the processing container. 【課題】半導体装置の製造品質を向上させると共に、製造スループットを向上させることが可能な技術を提供すること。【解決手段】基板を収容する処理容器と、処理容器に収容された基板を加熱する第１の加熱部と、処理ガスを生成するガス生成部と、ガス生成部から処理ガスを処理容器内に導入するガス導入管と、処理容器の外側に設けられ、ガス導入管の処理容器との接続部分を加熱する第２の加熱部と、を有する基板処理装置を提供する。【選択図】図１