METHOD FOR DEPOSITION OF SILICON-CONTAINING FILM
PROBLEM TO BE SOLVED: To provide a composition for deposition of a carbon-doped silicon-containing film.SOLUTION: A composition comprises: a first precursor including at least one compound selected from a group consisting of an organic amino alkyl silane having the formula, RSi(NRR)H(where x=1, 2, 3...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English Japanese |
Published |
24.12.2015
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a composition for deposition of a carbon-doped silicon-containing film.SOLUTION: A composition comprises: a first precursor including at least one compound selected from a group consisting of an organic amino alkyl silane having the formula, RSi(NRR)H(where x=1, 2, 3), an organic alkoxy alkyl silane having the formula, RSi(OR)H(where x=1, 2, 3), an organic aminosilane having the formula, RN(SiR(NRR)H), an organic aminosilane having the formula, RN(SiRLH), and a combination thereof; and an appropriate second precursor including a compound having the formula, Si(NRR)H.
【課題】炭素ドープケイ素含有膜を堆積するための組成物を提供する。【解決手段】この組成物は、R5Si(NR3R4)xH3−x(ここで、x=1、2、3)の式を有する有機アミノアルキルシラン、R6Si(OR7)xH3−x(ここで、x=1、2、3)の式を有する有機アルコキシアルキルシラン、R8N(SiR9(NR10R11)H)2の式を有する有機アミノシラン、R8N(SiR9LH)2の式を有する有機アミノシラン及びこれらの組合せからなる群より選択される少なくとも1つの化合物を含む第1の前駆体並びにSi(NR1R2)H3の式を有する化合物を含む随意の第2の前駆体を含有する。【選択図】図1 |
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Bibliography: | Application Number: JP20150144696 |