OXIDE SEMICONDUCTOR EVALUATION DEVICE AND METHOD

• Main Author: INUI MASAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 24.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To provide an oxide semiconductor evaluation device and method which are arranged so that the mobility of an oxide semiconductor can be evaluated with more accuracy by factoring in a thickness of an oxide semiconductor.SOLUTION: An oxide semiconductor evaluation device comprises: a light source part 1 serving as a light irradiation part for irradiating an oxide semiconductor SP targeted for evaluation with light of a predetermined wavelength; a measurement-wave irradiation part 2 for irradiating the oxide semiconductor SP with predetermined measurement waves; a reflection-wave measurement part 3 for measuring reflection waves produced by the measurement waves reflected off the oxide semiconductor SP; a thickness measurement part 4 for measuring the thickness of the oxide semiconductor SP in a direction along a travelling direction of light emitted by the light irradiation part; and a control-processing part 5 as a processing part for correcting the intensities of reflection waves measured by the reflection-wave measurement part 3 based on the thickness of the oxide semiconductor SP measured by the thickness measurement part 4. 【課題】酸化物半導体の厚さを考慮することによって、酸化物半導体の移動度をより精度良く評価できる酸化物半導体評価装置および該方法を提供する。【解決手段】所定波長の光を評価対象の酸化物半導体ＳＰに照射する光照射部としての光源部１と、酸化物半導体ＳＰに所定の測定波を照射する測定波照射部２と、酸化物半導体ＳＰで反射された測定波の反射波を測定する反射波測定部３と、光照射部によって照射される光の進行方向に沿った方向における酸化物半導体ＳＰの厚さを測定する厚さ測定部４と、厚さ測定部４で測定された酸化物半導体ＳＰの厚さとに基づいて、反射波測定部３で測定された反射波の強度を補正する処理部としての制御処理部５とを備える。【選択図】図１