LIGHT EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: SOGO TAKAYUKI, SOGAI TAKANOBU
• Format: Patent
• Language: English; Japanese
• Published: 14.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a light emission device and a manufacturing method for the same that can prevent melted solder from creeping to a semiconductor light emission element when the semiconductor light emission element is packaged, thereby packaging the semiconductor light emission element with high reliability.SOLUTION: A light emission device 100 has a semiconductor light emission element 1 having a semiconductor laminate 12 and electrodes 13, 15 provided on one surface, and a first resin layer 21 and a second resin layer 22 which are laminated at one surface side of the semiconductor laminate 12. The first resin layer 21 has first metal layers 31n, 31p connected to the electrodes 13, 15 therein, and the second resin layer 22 has second metal layers 32n, 32p connected to the first metal layers 31n, 31p therein. The upper surfaces of the second metal layers 32n, 32p are exposed from the second resin layer 22, and the side surface of the second resin layer 22 is provided to be located at the inside of the first resin layer 21 in plan view. 【課題】実装時に溶融した半田が半導体発光素子まで這い上がることを防止して、信頼性の高い実装が可能な発光装置及びその製造方法を提供する。【解決手段】発光装置１００は、半導体積層体１２と、一方の面に設けられる電極１３，１５と、を有する半導体発光素子１と、半導体積層体１２の一方の面側に、第１樹脂層２１と第２樹脂層とが積層して設けられる。第１樹脂層２１は、内部に電極１３，１５と接続される第１金属層３１ｎ，３１ｐを有し、第２樹脂層２２は、内部に第１金属層３１ｎ，３１ｐと接続される第２金属層３２ｎ，３２ｐを有する。第２金属層３２ｎ，３２ｐの上面は、第２樹脂層２２から露出するとともに、第２樹脂層２２の側面が、平面視で第１樹脂層２１の側面よりも内側になるように設けられている。【選択図】図１