PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD

• Main Authors: USHIO SHINNOSUKE, INAI SEIICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 10.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having high photoelectric conversion efficiency.SOLUTION: In a manufacturing method of a photoelectric conversion device 11 of forming on an electrode layer 2, a membrane M containing a group 11 element, In and Ga, and heating the membrane M in a Se-containing atmosphere to obtain a group I-III-VI compound semiconductor layer 3 which contains In and Ga as group 13 elements and contains Se as a group 16 element, when a part located on the electrode layer 2 side of the center of a thickness is a first part M1 and rest is a second part M2, a membrane in which the first part M1 contains a group 11 element and contains at least In as a group 13 element, and the second part M2 contains a group 11 element and contains at least Ga as a group 13 element, and a ratio C/(C+C) where an average atomic concentration of In is Cand an average atomic concentration of Ga is Cis larger in the first part M1 than in the second part M2 is used as the membrane M. 【課題】 光電変換効率の高い光電変換装置を提供する。【解決手段】 光電変換装置１１の製造方法は、電極層２上に、１１族元素、ＩｎおよびＧａを含む皮膜Ｍを形成し、皮膜ＭをＳｅを含む雰囲気で加熱することによって１３族元素としてＩｎおよびＧａを含むとともに１６族元素としてＳｅを含むＩ−III−VI族化合物半導体層３にする光電変換装置１１の製造方法であって、皮膜Ｍとして、厚みの中央よりも電極層２側に位置する部位を第１部位Ｍ１とし、残部を第２部位Ｍ２としたときに、第１部位Ｍ１は１１族元素を含むとともに１３族元素として少なくともＩｎを含み、第２部位Ｍ２は１１族元素を含むとともに１３族元素として少なくともＧａを含み、Ｉｎの平均原子濃度をＣＩｎとし、Ｇａの平均原子濃度をＣＧａとしたときの比率ＣＩｎ／（ＣＩｎ＋ＣＧａ）が第２部位Ｍ２よりも第１部位Ｍ１の方で大きいものを用いる。【選択図】 図４