QUARTZ GLASS CRUCIBLE FOR DRAWING UP SINGLE CRYSTAL SILICON

PROBLEM TO BE SOLVED: To provide a quartz glass crucible for drawing up a single crystal silicon that effectively suppresses liquid surface vibration when drawing up a single crystal silicon, especially when drawing up one after plural pieces of single crystal silicon in multiple drawing.SOLUTION: A...

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Bibliographic Details
Main Authors BABA YUJI, OHAMA YASUO
Format Patent
LanguageEnglish
Japanese
Published 07.12.2015
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
GLASS
MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
METALLURGY
MINERAL OR SLAG WOOL
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:PROBLEM TO BE SOLVED: To provide a quartz glass crucible for drawing up a single crystal silicon that effectively suppresses liquid surface vibration when drawing up a single crystal silicon, especially when drawing up one after plural pieces of single crystal silicon in multiple drawing.SOLUTION: A quartz glass crucible 11 for drawing up a single crystal silicon from silicon melt held inside is composed of a bottom part, a curved part, and a trunk part. The quart glass crucible 11 has an outer layer 13 made of opaque quartz glass containing air bubbles and an inner layer 12 made of transparent quartz glass containing substantially no air bubbles. Grooves 21 long in the vertical direction are formed on a part of the inner surface of the trunk part so as to contact the surface of the melt in the initial state of the silicon melt held in the crucible 11. Grooves 21 are not formed on the bottom part nor on the curved part. 【課題】単結晶シリコンの引き上げ時の液面振動の発生を効果的に抑制し、特に、マルチ引き上げにおける複数本目の単結晶シリコン引き上げの際の液面振動の発生を抑制することができる単結晶シリコン引き上げ用石英ガラスるつぼを提供する。【解決手段】底部、湾曲部、及び直胴部とからなり、内部に保持したシリコン融液から単結晶シリコンを引き上げるための石英ガラスるつぼ１１であって、気泡を含有する不透明石英ガラスからなる外層１３と、実質的に気泡を含有しない透明石英ガラスからなる内層１２とを有し、前記直胴部の内表面の一部に、上下方向を長手方向とした溝２１が形成されており、かつ、溝２１は、るつぼ１１が前記シリコン融液を保持する際に、溝２１が前記シリコン融液の初期状態における融液面と接するように形成されており、前記底部及び前記湾曲部には溝２１が形成されていない単結晶シリコン引き上げ用石英ガラスるつぼ１１。【選択図】図１
Bibliography:Application Number: JP20140103354