SEMICONDUCTOR LIGHT EMISSION DEVICE

• Main Authors: KOJIMA AKIHIRO, TOMIZAWA HIDEYUKI, FURUYAMA HIDETO, SUGIZAKI YOSHIAKI, SHIMADA MIYOKO, AKIMOTO YOSUKE
• Format: Patent
• Language: English; Japanese
• Published: 03.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor light emission device that can be enhanced in light emission efficiency.SOLUTION: A semiconductor light emission device has a first semiconductor layer, a light emission layer provided on a second face of the first semiconductor device, a second semiconductor layer provided on the light emission layer, a p-side electrode which is provided on the second semiconductor layer and has reflectivity for light emitted from the light emission layer, plural n-side electrodes provided onto the second face, an insulation film provided on the second semiconductor layer between the plural n-side electrodes, plural n-side vias provided on the plural n-side electrodes, a connection portion which is provided on the insulation film and connects the plural n-side vias, and an n-side reflection electrode which has higher reflectivity for light emitted from the light emission layer than the n-side electrode and is formed of the same material as the p-side electrode. 【課題】発光効率を向上できる半導体発光装置を提供する。【解決手段】半導体発光装置は、第１の半導体層と、第１の半導体層の第２の面上に設けられた発光層と、発光層上に設けられた第２の半導体層と、第２の半導体層上に設けられ発光層の発光光に対して反射性を有するｐ側電極と、第２の面上に設けられた複数のｎ側電極と、複数のｎ側電極間の第２の半導体層上に設けられた絶縁膜と、複数のｎ側電極のそれぞれの上に設けられた複数のｎ側ビアと、絶縁膜上に設けられ複数のｎ側ビアをつなぐ連結部とを有し、ｎ側電極よりも発光層の発光光に対する反射率が高く、ｐ側電極と同じ材料のｎ側反射電極と、を備えている。【選択図】図３２