THIN-FILM LAMINATION STRUCTURE OF COMPOUND SEMICONDUCTOR, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD OF MANUFACTURING THEM

• Main Authors: AMANO HIROSHI, HONDA YOSHIO, YAMADA HITOSHI, WADO HIROYUKI
• Format: Patent
• Language: English; Japanese
• Published: 19.11.2015
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a thin-film lamination structure of a compound semiconductor that can increase an In composition and that has a structure with reduced dislocation.SOLUTION: Provided is a structure obtained by sequentially laminating a plurality of InGaN layers 5, 9, and 13 by using mask materials 2, 6, and 10. A GaN layer 3 and InGaN layers 7 and 11 are configured by island-like parts with triangular cross sections and that are grown through openings 2a, 6a, 10a of each mask 2, 6, 10, and high-In composition InGaN thin films 5, 9, and 13 are formed thereon. Thereby, threading dislocation existing inside can be extended in parallel to a growth direction, and the dislocation can be reduced. In addition, with respect to the plurality of InGan layers 5, 9, and 13, the In composition becomes larger as it goes above. That is, when a composition of the m-th (m is a natural number) InGaN layer is defined as InGaN, xm<x(m+1) is satisfied in a comparison between In compositions of the m-th InGaN layer and the (m+1)th InGaN layer above the m-th InGaN layer. 【課題】Ｉｎ組成を大きくでき、かつ、転位を低減した構造を有する化合物半導体の薄膜積層構造を提供する。【解決手段】マスク材２、６、１０を用いて、複数のＩｎＧａＮ層５、９、１３を順に積層した構造とする。また、各マスク２、６、１０の開口部２ａ、６ａ、１０ａよりＧａＮ層３やＩｎＧａＮ層７、１１を断面が三角形状の島状部で構成し、その上に高Ｉｎ組成ＩｎＧａＮ薄膜５、９、１３を形成する。これにより、内部に存在する貫通転位が成長方向に対して平行に伸張するようにでき、転位を低減することが可能となる。また、複数のＩｎＧａｎ層５、９、１３については、上層に行くほど、Ｉｎ組成が大きくなるようにする。つまり、ｍ層目（ｍは自然数）のＩｎＧａＮ層の組成がＩｎxmＧａ(1-xm)Ｎであるとすると、ｍ層目とその上層となるｍ＋１層目のＩｎＧａＮ層のＩｎ組成を比較すると、ｘｍ＜ｘ（ｍ＋１）となるようにする。【選択図】図１