SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR ELEMENT MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR ELEMENT

• Main Authors: GOTO HIROICHI, TSUCHIYA KEITARO, SHIKAUCHI HIROSHI, SATO KEN, HAGIMOTO KAZUNORI, SHINOMIYA MASARU
• Format: Patent
• Language: English; Japanese
• Published: 12.11.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor substrate manufacturing method which can reduce a concentration gradient of a carbon concentration in a high-resistance layer and make the carbon concentration be an intended value.SOLUTION: Provided is a manufacturing method of a semiconductor substrate which has a substrate, an initial layer on the substrate, a high resistance layer on the initial layer, which is composed of a nitride-based semiconductor and contains carbon, and a channel layer on the high resistance layer, which is composed of a nitride-based semiconductor. In a process of forming the high resistance layer, the high resistance layer is formed by generating a gradient of a preset temperature for heating the semiconductor substrate to make the preset temperature at the start of the high resistance layer formation be different from the preset temperature at the end of the high resistance layer formation. 【課題】 高抵抗層中の炭素濃度の濃度勾配を低減できるとともに炭素濃度を所望の値とすることができる半導体基板の製造方法を提供することを目的とする。【解決手段】 基板と、前記基板上の初期層と、前記初期層上の窒化物系半導体からなり、炭素を含む高抵抗層と、前記高抵抗層上の窒化物系半導体からなるチャネル層とを有する半導体基板の製造方法であって、前記高抵抗層を形成する工程において、前記半導体基板を加熱する設定温度に勾配を持たせて、高抵抗層形成開始時の前記設定温度と高抵抗層形成終了時の前記設定温度が異なるようにして前記高抵抗層を形成することを特徴とする半導体基板の製造方法。【選択図】 図１