SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: SAITO TATSUMA, TANAKA SATOSHI
• Format: Patent
• Language: English; Japanese
• Published: 12.11.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a high-performance semiconductor light emitting device and a method for manufacturing the same, which substantially suppresses light crosstalk and can clearly and visually recognize light-dark between elements on an irradiation image, and high quality semiconductor light emitting device with improved yield and a method for manufacturing the same.SOLUTION: A method comprises: a step of arranging a plurality of semiconductor light emitting elements 20 on a mounting substrate; a step of forming a protection layer 30 a region between elements of a plurality of semiconductor light emitting elements on the mounting substrate; a step of forming a phosphor layer PL so as to cover the entirety of a plurality of semiconductor light emitting elements and the protection layer; a step of partly removing the phosphor layer by irradiating a surface of the phosphor layer on the protection layer with the laser or the charged particle beam and dividing the phosphor layer into a plurality of phosphor parts in the region between elements. 【課題】光のクロストークが大幅に抑制され、照射像において素子間の明暗を明確に視認することが可能な高性能の半導体発光装置及びその製造方法、また、歩留まりが向上した高品質な半導体発光装置及びその製造方法を提供する。【解決手段】搭載基板上に複数の半導体発光素子２０を配置する工程と、搭載基板における複数の半導体発光素子の素子間領域に保護層３０を形成する工程と、複数の半導体発光素子及び保護層の全体を覆うように蛍光体層ＰＬを形成する工程と、保護層上における蛍光体層の表面にレーザ又は荷電粒子のビームを照射することによって前記蛍光体層を部分的に除去し、素子間領域において蛍光体層を複数の蛍光体部に分離する工程と、を含む。【選択図】図１