SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

• Main Author: KARAKAWA TAKAYUKI
• Format: Patent
• Language: English; Japanese
• Published: 12.11.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a substrate with plasma's modification effects at a low cost.SOLUTION: A substrate processing apparatus 10 includes: a platform 14 which has a substrate placement region 14a where a substrate W is placed, and on which the substrate placement region 14a is rotatably provided around an axis line X; a processing container 12 which defines a processing chamber C including a first region R1 and a second region R2; a precursor gas supply unit 16 which supplies precursor gas to the first region R1; a process gas supply unit 22b which supplies first gas or second gas to the second region R2; a plasma generation unit 22 which generates first or second gas plasma in the second region R2; and a control unit which repeatedly performs a first operation to supply the first gas to the second region R2 for a first period of time and a second operation to supply the second gas to the second region R2 for a second period of time. 【課題】低いコストで、基板にプラズマによる改質効果を与える。【解決手段】開示する基板処理装置１０は、基板Ｗが載置される基板載置領域１４ａを有し、基板載置領域１４ａが軸線Ｘを中心に回転可能に設けられた載置台１４と、第１の領域Ｒ１および第２の領域Ｒ２を含む処理室Ｃを画成する処理容器１２と、第１の領域Ｒ１に前駆体ガスを供給する前駆体ガス供給部１６と、第２の領域Ｒ２に第１または第２のガスを供給するプロセスガス供給部２２ｂと、第２の領域Ｒ２において第１または第２ガスのプラズマを生成するプラズマ生成部２２と、第１のガスを第２の領域Ｒ２に第１の時間供給する第１の動作と、第２のガスを第２の領域Ｒ２へ第２の時間供給する第２の動作とを繰り返す反復制御を行う制御部と、を備える。【選択図】図７