THIN FILM TRANSISTOR ARRAY AND MANUFACTURING METHOD OF THE SAME

• Main Author: MATSUBARA RYOHEI
• Format: Patent
• Language: English; Japanese
• Published: 09.11.2015
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; LABELS OR NAME-PLATES; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a thin film transistor array and manufacturing method of the thin film transistor array that have an excellent transistor characteristic even when the thin film transistor array is irradiated with light.SOLUTION: A thin film transistor array comprises: a substrate; a plurality of thin film transistors that has at least a gate electrode, gate insulating film, source/drain electrodes, semiconductor layer formed between the source/drain electrodes, interlayer insulating film and upper pixel electrode on the substrate; gate wiring to which the gate electrode is connected; and source wiring to which the source electrode is connected. Adjacent upper pixel electrodes with an insulation property between them are overlapped across the interlayer insulating film between the upper pixel electrodes. 【課題】光が照射された場合においても良好なトランジスタ特性を有する薄膜トランジスタアレイおよびその製造方法を提供する。【解決手段】薄膜トランジスタアレイは、基板と、基板上に少なくともゲート電極と、ゲート絶縁膜と、ソース・ドレイン電極と、ソース・ドレイン電極間に形成された半導体層と、層間絶縁膜と、上部画素電極とを有する複数の薄膜トランジスタと、ゲート電極が接続されるゲート配線と、ソース電極が接続されるソース配線とを備え、隣り合う上部画素電極どうしは絶縁性を有する上部画素電極間絶縁層を挟んで重なり合うことを特徴とする。【選択図】図２