SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: HAMANO KENICHI, ONO AKIHITO, TOMITA NOBUYUKI, YAMAMOTO TAKAHIRO, MITANI YOICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 22.10.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To achieve a silicon carbide semiconductor device manufacturing method which can improve reliability of a product.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises the steps of: firstly preparing a silicon carbide single crystal substrate 1 having flatness of average roughness of not exceeding 0.2 nm; subsequently gas etching a surface of the silicon carbide single crystal substrate 1 in a reducing gas atmosphere; and epitaxially growing a silicon carbide film 6 on the surface of the silicon carbide single crystal substrate 1 after the gas etching. Here, an etching rate in the gas etching is set at not less than 0.5 μm/h and not more than 2.0 μm/h. 【課題】製品の信頼性を向上させることができる炭化珪素半導体装置の製造方法を得る。【解決手段】まず、平均粗さ０．２ｎｍ以下の平坦性を有する炭化珪素単結晶基板１を準備する。次に、炭化珪素単結晶基板１の表面を還元性ガス雰囲気中でガスエッチングする。ガスエッチング後に炭化珪素単結晶基板１の表面上に炭化珪素膜６をエピタキシャル成長させる。ここで、ガスエッチングのエッチングレートを０．５μｍ／ｈ以上２．０μｍ／ｈ以下とする。【選択図】図１