SEMICONDUCTOR DEVICE

• Main Authors: FURUKAWA MASARU, UCHIHARA TSUKASA, YOSHIOKA AKIRA, ONO TETSUYA, MURAKAMI YUKAKO, YUMOTO MIKI, FUJIMOTO HIDETOSHI, MASUKO SHINGO, SUZUKI YOSHIKAZU, ABE KAZUHIDE, YASUMOTO YASUAKI, SAITO YASUNOBU, NAKA TOSHIYUKI, YANASE NAOKO, ONO YU, IIDA ATSUKO, YAGI YASUNARI
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device with a resonator using a GaN-based semiconductor.SOLUTION: The semiconductor device includes: a GaN-based semiconductor layer 12; a resonator 14 that resonates a part of the GaN-based semiconductor layer 12 as a piezoelectric layer; and a transistor 22 that uses a part of GaN-based semiconductor layer 12 as a channel layer. The resonator 14 has a comb-like electrode 20 mounted on the GaN-based semiconductor layer 12. The transistor 22 has a gate electrode, and the gate electrode and the comb-like electrode 20 are formed from the same material. 【課題】ＧａＮ系半導体を用いた共振子を備える半導体装置を提供する。【解決手段】実施形態の半導体装置は、ＧａＮ系半導体層１２と、ＧａＮ系半導体層１２の一部を圧電層として共振する共振子１４と、ＧａＮ系半導体層１２の一部をチャネル層とするトランジスタ２２と、を備え、共振子１４が、ＧａＮ系半導体層１２上に設けられる櫛型電極２０を有する。また、トランジスタ２２がゲート電極を有し、ゲート電極と櫛型電極２０とが同一材料で形成される。【選択図】図１