NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

• Main Author: HOSONO KOJI
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2015
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that can reduce writing disturbance.SOLUTION: A nonvolatile semiconductor storage device comprises: first and second columnar semiconductors that are arranged on a semiconductor layer and extend in a normal direction relative to the semiconductor layer; a memory cell (MC) that includes the first and second columnar semiconductors (SC) via a gate insulator film, and includes an electric charge accumulation layer and a control gate; first and second selection transistors that are formed so as to sandwich the memory cell; a memory cell array that plurally includes a memory string (MS) including a back gate transistor (BG) parallely connected to the first and second selection transistors; and a control unit that applies a writing voltage to the memory cell prior to a writing operation for applying the writing voltage to the first selection transistor (ST1). 【課題】書き込みディスターブを低減可能とする不揮発性半導体記憶装置を提供する。【解決手段】半導体層上に配置され、前記半導体層に対する法線方向に延びた第１柱状半導体及び第２柱状半導体、ゲート絶縁膜を介して前記第１及び第２柱状半導体（ＳＣ）を含み、電荷蓄積層及び制御ゲートを含むメモリセル（ＭＣ）、前記メモリセルを挟むように形成された第１、及び第２選択トランジスタ、前記第１選択トランジスタと前記第２選択トランジスタに直列に接続されたバックゲートトランジスタ（ＢＧ）を含むメモリストリング（ＭＳ）を複数含むメモリセルアレイと、前記第１選択トランジスタ（ＳＴ１）に書き込み電圧を印加する書き込み動作の前に、前記メモリセルに書き込み電圧を印加する制御部とを具備する。【選択図】図６