INTEGRATED TYPE SEMICONDUCTOR OPTICAL ELEMENT, AND METHOD OF MANUFACTURING THE SAME

• Main Authors: KAWAKITA YASUMASA, YOKOUCHI NORIYUKI
• Format: Patent
• Language: English; Japanese
• Published: 10.09.2015
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide an integrated type semiconductor optical element that has a low optical coupling loss between a waveguide and a semiconductor optical element and a low manufacturing cost, and a method of manufacturing the integrated type semiconductor optical element.SOLUTION: The tip of a waveguide 30 has at least a taper portion 31 which is formed at a semiconductor optical element 20 side and gradually increases in width toward an opposite side to the semiconductor optical element 20 side. A clad layer 15 which extends to the semiconductor optical element 20 and is coupled to the semiconductor optical element 20 is formed to cover the surface of the waveguide 30. The refractivity of the clad layer 15 is lower than those of the semiconductor optical element 20 and the waveguide 30. The semiconductor optical element 20 has a mesa structure, and a junction structure that the cross-section of the mesa structure of the semiconductor optical element 20 is contained in the cross-section of the clad layer 15 on the junction cross-section in which the clad layer 15 and the semiconductor optical element 20 are optically coupled to each other. 【課題】導波路と半導体光素子間の光結合損失が低く、かつ製造コストが低い集積型半導体光素子、及び集積型半導体光素子の製造方法を提供する。【解決手段】導波路３０の先端が、半導体光素子２０側に形成されかつ半導体光素子２０側とは反対側に向けて漸次幅が増加するテーパ部３１を少なくとも有し、導波路３０の表面を覆うように形成されるとともに半導体光素子２０に向けて延伸し該半導体光素子２０に接合する、半導体光素子２０及び導波路３０よりも屈折率が低いクラッド層１５を備え、半導体光素子２０がメサ構造を有し、クラッド層１５と半導体光素子２０とが光結合している接合断面において、半導体光素子２０のメサ構造の断面がクラッド層１５の断面内に含まれる接合構造を有することを特徴とする。【選択図】図１