SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME

• Main Authors: MIYOSHI TAKASHI, MASUI SHINGO, SONOBE SHINYA
• Format: Patent
• Language: English; Japanese
• Published: 03.09.2015
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a manufacturing method of the same, which improve power efficiency by improving electrical characteristics to achieve high reliability in a semiconductor laser element which uses a conductive oxide and has a ridge shape.SOLUTION: A semiconductor laser element comprises: a substrate 10; a semiconductor layer in which a first conductivity type semiconductor layer 12, an active layer 14 and a second conductivity type semiconductor layer 16 are sequentially laminated on the substrate; a stripe-shaped ridge 18 formed on a top face of the second conductivity type semiconductor layer; a conductive oxide layer 20 formed on a top face of the ridge; a dielectric layer 24 which is formed on lateral faces of the ridge; and a metal layer 22 formed to cover the conductive oxide layer and the dielectric layer, in which a surface of the conductive oxide layer is exposed from the dielectric layer, and lateral faces of the conductive oxide layer inclines from a normal direction with respect to the top face of the ridge, and an inclination angle of each lateral face of the conductive oxide layer is larger than an inclination angle of each ridge lateral face from the normal direction. 【課題】導電性酸化物を用いた、リッジ形状を有する半導体レーザ素子において、電気特性を改善することにより、電力効率を向上させ、信頼性の高い半導体レーザ素子及びその製造方法を提供する。【解決手段】基板１０と、前記基板上に、第１導電型半導体層１２と、活性層１４と、第２導電型半導体層１６とが順に積層された半導体層と、第２導電型半導体層の上面に形成されたストライプ状のリッジ１８と、リッジの上面に形成された導電性酸化物層２０と、リッジの側面に形成された、半導体層よりも屈折率が低い誘電体層２４と、導電性酸化物層及び誘電体層を覆うように形成された金属層２２とを備え、導電性酸化物層の表面は誘電体層から露出し、かつその側面は、リッジの上面に対する法線方向から傾斜しており、導電性酸化物層の側面の傾斜角度は、リッジ側面の、法線方向からの傾斜角度よりも大きい。【選択図】図１