PROCESSING METHOD, PROCESSING DEVICE, AND PRODUCT PRODUCED THEREBY

• Main Authors: OYAMA KOKI, AIDA HIDEO, DOI TOSHIRO, SANO YASUHISA, MIYASHITA CHUICHI
• Format: Patent
• Language: English; Japanese
• Published: 03.09.2015
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a processing device which can efficiently conduct a process, such as polishing on even a highly rigid work piece, such as SiC, GaN or diamond.SOLUTION: A processing device comprises: a mechanically processing unit 12 which touches a work piece W, relatively moves with respect to the work piece W, and forms a process-affected layer on at least a part of the surface of the work piece W; a plasma generating unit 14 which is disposed adjacently to the mechanically processing unit 12 and causes plasma to chemically act on the surface of at least part of the process-affected layer formed by the mechanically processing unit 12 and thus, removes the at least part of the process-affected layer; a holding unit 17 for holding the work piece W; and a transporting mechanism 18 which transports the work piece W held by the holding unit 17 between the mechanically processing unit 12 and the plasma generating unit 14. 【課題】ＳｉＣ、ＧａＮやダイヤモンドなどの高硬度の被加工物であっても効率よく研磨等の加工をすることのできる加工装置を提供する。【解決手段】被加工物Ｗに接触し、被加工物Ｗとの間の相対移動により被加工物Ｗの表面の少なくとも一部に加工変質層を形成する機械的加工部１２と、機械的加工部１２に隣接して配置され、機械的加工部１２により形成された加工変質層の少なくとも一部の表面にプラズマを化学的に作用させ、加工変質層の少なくとも一部を除去するプラズマ発生部１４と、被加工物Ｗを保持する保持部１７と、保持部１７に保持された被加工物Ｗを機械的加工部１２とプラズマ発生部１４との間に亘って移動させる移動機構１８とを具備することを特徴とする。【選択図】図４