PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE

• Main Author: KONDO TAKEHIRO
• Format: Patent
• Language: English; Japanese
• Published: 24.08.2015
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a pattern forming method by which a shrinkage amount can be controlled each in a dense pattern and in a coarse pattern on the same substrate, and a semiconductor device.SOLUTION: The pattern forming method in one embodiment comprises: forming a resist film on a material to be treated; processing the resist film into a resist pattern; applying a crosslinking film or a coating material that protects the resist film on the resist film; applying a self-organizing material on the resist film coated with the crosslinking film; heat-treating the self-organizing material to induce phase separation; and removing a part of the phase-separated self-organizing material. 【課題】同一基板上の密状態のパターンと粗状態のパターンとのそれぞれにおいてシュリンク量を制御することができるパターン形成方法および半導体装置を提供する。【解決手段】本実施形態によるパターン形成方法は、被処理材料上にレジスト膜を形成する。レジスト膜がレジストパターンに加工される。レジスト膜上に該レジスト膜を保護する架橋膜またはコーティング剤が塗膜される。架橋膜を塗膜したレジスト膜上に自己組織化材料が塗布される。自己組織化材料は熱処理され相分離させる。相分離した自己組織化材料の一部は除去される。【選択図】図１