SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an effective technique for relaxing a thermal stress generated at a bonding layer with a simple structure in a semiconductor device in which a semiconductor element is bonded on a substrate through the bonding layer.SOLUTION: A semiconductor device 100 includes: a me...

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Bibliographic Details
Main Author KUME YASUHIRO
Format Patent
LanguageEnglish
Japanese
Published 06.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Summary:PROBLEM TO BE SOLVED: To provide an effective technique for relaxing a thermal stress generated at a bonding layer with a simple structure in a semiconductor device in which a semiconductor element is bonded on a substrate through the bonding layer.SOLUTION: A semiconductor device 100 includes: a metal substrate 110; and a semiconductor element 120 bonded to the substrate 110 through a bonding layer 130 composed only of a bonding material coated to a bonding region 112 on the substrate 110. A shape of an outer periphery part of the bonding layer 130 is constituted of an R part 131 having a predetermined radius of curvature. 【課題】 基板上に接合層を介して半導体素子が接合される半導体装置において、接合層に生じる熱応力を簡単な構造によって緩和するのに有効な技術を提供する。【解決手段】 本発明にかかる半導体装置１００は、金属製の基板１１０と、基板１１０上の接合領域１１２に塗布される接合材料のみからなる接合層１３０を介して基板１１０に接合された半導体素子１２０と、を含み、接合層１３０の外周部分の形状が所定の曲率半径を有するＲ部１３１によって構成されている。【選択図】 図１
Bibliography:Application Number: JP20140088465