NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND NITRIDE SEMICONDUCTOR DEVICE

• Main Authors: NARITA YOSHINOBU, TANAKA TAKESHI, SAKAGUCHI HARUNORI, MEGURO TAKESHI
• Format: Patent
• Language: English; Japanese
• Published: 23.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a nitride semiconductor epitaxial wafer from which a plurality of nitride semiconductor devices with small variation in electric characteristics can be formed.SOLUTION: A nitride semiconductor epitaxial wafer 10 in the present aspect comprises: a substrate 11; and a...