NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND NITRIDE SEMICONDUCTOR DEVICE

• Main Authors: NARITA YOSHINOBU, TANAKA TAKESHI, SAKAGUCHI HARUNORI, MEGURO TAKESHI
• Format: Patent
• Language: English; Japanese
• Published: 23.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a nitride semiconductor epitaxial wafer from which a plurality of nitride semiconductor devices with small variation in electric characteristics can be formed.SOLUTION: A nitride semiconductor epitaxial wafer 10 in the present aspect comprises: a substrate 11; and a nitride semiconductor layer 12 formed on the substrate 11 and whose surface azimuth of an upper surface is a (002) plane. A variation in a half value width of an X-ray rocking curve in the (002) plane or a (100) plane of the nitride semiconductor layer 12 is 30% or less, and the nitride semiconductor epitaxial wafer 10 has a thickness of 100 μm or more and a diameter of 50 mm or more. 【課題】電気特性のばらつきの小さい複数の窒化物半導体デバイスを形成することのできる窒化物半導体エピタキシャルウェハを提供する。【解決手段】本発明の一態様において、基板１１と、基板１１上に形成された、上面の面方位が（００２）面である窒化物半導体層１２と、を有し、窒化物半導体層１２の（００２）面又は（１００）面におけるＸ線ロッキングカーブの半値幅のばらつきが３０％以下である、厚さが１００μｍ以上、直径が５０ｍｍ以上の窒化物半導体エピタキシャルウェハ１０を提供する。【選択図】図１