METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To solve such a problem that, in high NA ArF immersion exposure after a 45 nm technology node, specifically in a microfabrication process such as a contact process, occurrences of variation in contact hole diameters or the like are caused frequently.SOLUTION: In one invention o...

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Bibliographic Details
Main Authors TADOKORO MASAHIRO, HAGIWARA TAKUYA, MURATA TATSUKI
Format Patent
LanguageEnglish
Japanese
Published 16.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To solve such a problem that, in high NA ArF immersion exposure after a 45 nm technology node, specifically in a microfabrication process such as a contact process, occurrences of variation in contact hole diameters or the like are caused frequently.SOLUTION: In one invention of the present application, a silicon nitride-based insulating film is inserted between a multilayer resist and an insulating film to be processed, in a contact process or the like. As a result, variations in contact hole diameters or the like in a contact process or the like can be reduced. 【課題】４５ｎｍテクノロジノード（Ｔｅｃｈｎｏｌｏｇｙ Ｎｏｄｅ）以降の高ＮＡのＡｒＦ液浸露光、特に、コンタクト工程等の微細加工工程に於いて、コンタクト穴径等のばらつきが多発している。【解決手段】本願の一つの発明は、コンタクト工程等において、多層レジストと被加工絶縁膜の間に、窒化シリコン系絶縁膜を挿入するものであり、このようにすることにより、コンタクト工程等におけるコンタクト穴径等のばらつきを低減することができる。【選択図】図４
Bibliography:Application Number: JP20140000866