MEMORY CONTROL DEVICE, MEMORY CONTROL METHOD, AND PROGRAM

PROBLEM TO BE SOLVED: To provide a memory control device, memory control method, and program, in which writing to a nonvolatile memory can be performed at high speed.SOLUTION: A first state, in which a predetermined value is written in the whole of a predetermined region in a nonvolatile memory, is...

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Bibliographic Details
Main Author FUJIWARA IZUMI
Format Patent
LanguageEnglish
Japanese
Published 06.07.2015
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:PROBLEM TO BE SOLVED: To provide a memory control device, memory control method, and program, in which writing to a nonvolatile memory can be performed at high speed.SOLUTION: A first state, in which a predetermined value is written in the whole of a predetermined region in a nonvolatile memory, is defined as flag information which indicates that a processing device is not in a predetermined state. In addition, a second state, in which a value corresponding to information for specifying that the processing device is in the predetermined state is written in a part of the predetermined storage region, is defined as flag information which indicates that the processing device is in the predetermined state. The flag information corresponding to either the first state or second state is stored in the nonvolatile memory. 【課題】 不揮発性メモリへの書き込みを高速に行うことができるメモリ制御装置、メモリ制御方法、およびプログラムを提供する。【解決手段】 不揮発性メモリにおける所定の記憶領域の全体に所定の値が書き込まれている第１の状態を処理装置が所定の状態でないことを示すフラグ情報とする。また当該所定の記憶領域の一部に、前記所定の状態であることを特定するための情報に対応する値が書き込まれている第２の状態を、当該所定の状態ではあることを示すフラグ情報とする。そして、当該第１の状態と当該第２の状態のいずれかに対応するフラグ情報を不揮発性メモリに記憶させる。【選択図】 図７
Bibliography:Application Number: JP20130269661