METHOD OF ETCHING

PROBLEM TO BE SOLVED: To provide a mask structure and etching method for etching a trench shape in a substrate.SOLUTION: A method includes the steps of forming a mask structure 12 over a substrate 10, the mask structure defining at least one re-entrant opening 14, etching the substrate through the o...

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Bibliographic Details
Main Author ASHRAF HUMA
Format Patent
LanguageEnglish
Japanese
Published 02.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a mask structure and etching method for etching a trench shape in a substrate.SOLUTION: A method includes the steps of forming a mask structure 12 over a substrate 10, the mask structure defining at least one re-entrant opening 14, etching the substrate through the opening to form a trench 16 using cyclic etch and deposition processes, and removing the mask. 【課題】トレンチ形状を基板にエッチングするためのマスク構造体とエッチング方法を提供する。【解決手段】マスク構造体１２を基板１０の上に形成させる工程で、マスク構造体が、少なくとも１つの凹形開口部１４を画定する工程と、周期的なエッチングプロセス及び堆積プロセスを用いて、開口部を通じて基板をエッチングして、トレンチ１６を形成させる工程と、マスクを除去する工程と、を含む。【選択図】図２
Bibliography:Application Number: JP20140258736