COMPOSITION FOR PASSIVATION LAYER FORMATION, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, SOLAR BATTERY ELEMENT, METHOD FOR MANUFACTURING SOLAR BATTERY ELEMENT, AND SOLAR BATTERY

• Main Authors: NOJIRI TAKESHI, MOMOZAKI AYA, MORISHITA MASATOSHI, HAYASAKA TAKESHI, YOSHIDA MASATO, KODAMA SHUNSUKE, TANAKA TORU, KURATA YASUSHI
• Format: Patent
• Language: English; Japanese
• Published: 22.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a composition for passivation layer formation which enables the formation of a passivation layer in a desired shape by a simple and easy method, and which is superior in storage stability.SOLUTION: A composition for passivation layer formation comprises: a compound expressed by the general formula (I), M(OR); and a compound having an urea bond. In the general formula (I), M includes at least one metal element selected from a group consisting of Nb, Ta, V, Y and Hf; R's independently represent an alkyl group with 1-8 carbon atoms, or an aryl group with 6-14 carbon atoms; and m represents an integer of 1-5. 【課題】簡便な手法で所望の形状にパッシベーション層を形成することができ、保存安定性に優れたパッシベーション層形成用組成物を提供する。【解決手段】一般式（Ｉ）：Ｍ（ＯＲ１）ｍで表される化合物と、ウレア結合を有する化合物と、を含有するパッシベーション層形成用組成物。式中、ＭはＮｂ、Ｔａ、Ｖ、Ｙ及びＨｆからなる群より選択される少なくとも１種の金属元素を含む。Ｒ１はそれぞれ独立して炭素数１〜８のアルキル基又は炭素数６〜１４のアリール基を表す。ｍは１〜５の整数を表す。【選択図】図８