SEMICONDUCTOR DEVICE

• Main Authors: HARADA ARATA, OKUMURA TOMOMI, FUKUTANI KEITA, HIRANO TAKAHIRO, NISHIHATA MASAYOSHI, KADOGUCHI TAKUYA
• Format: Patent
• Language: English; Japanese
• Published: 22.06.2015
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To decrease the possibility of a short circuit between a region having potential on a higher potential side and a region having potential on a lower potential side.SOLUTION: A semiconductor device comprises a first switching element (20), a second switching element (30), a first metal component (50), a second metal component (54), a first terminal (40) having potential on a higher potential side, a second terminal (42) having potential on a lower potential side, a third terminal (44) having midpoint potential and a resin part (66). When assuming that a part to have the same potential with the first terminal is a first potential part (P), a part to have the same potential with the second terminal is a second potential part (N) and a part to have the same potential with the third terminal is a third potential part (O), a first creeping distance between the first potential part and the second potential part is longer than a minimum value of a second creeping distance between the first potential part and the third potential part, and a third creeping distance between the second potential part and the third potential part. 【課題】高電位側の電位を持つ部位と低電位側の電位を持つ部位との間の短絡の可能性を低減すること。【解決手段】半導体装置は、第１スイッチング素子（２０）と、第２スイッチング素子（３０）と、第１金属部材（５０）と、第２金属部材（５４）と、高電位側の電位を持つ第１端子（４０）と、低電位側の電位を持つ第２端子（４２）と、中点電位を持つ第３端子（４４）と、樹脂部（６６）とを備え、前記第１端子と同電位となる部分を第１電位部（Ｐ）、前記第２端子と同電位となる部分を第２電位部（Ｎ）、及び、前記第３端子と同電位となる部分を第３電位部（Ｏ）としたとき、前記第１電位部と前記第２電位部との間の第１沿面距離は、前記第１電位部と前記第３電位部との間の第２沿面距離、及び、前記第２電位部と前記第３電位部との間の第３沿面距離のうちの最小値よりも長い。【選択図】図６