SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Author: KAWASAKI ATSUKO
• Format: Patent
• Language: English; Japanese
• Published: 22.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device manufacturing method.SOLUTION: A semiconductor device manufacturing method according to an embodiment comprises: a process of forming a lower layer part 11a having a first joint surface Sa where a conductive region and an insulation region are exposed; a process of forming an upper layer part 11b having a second joint surface Sb where at least the conductive region is exposed; a process of performing selective etching so as to make at least a partial region of the exposed insulation region exposed on the first junction surface Sa, which includes a surrounding area of the conductive region be lower than a surface of the conductive region; and a process of bonding the first joint surface Sa and the second joint surface Sb in a manner such that a partial region of the first joint surface Sa does not contact the second joint surface Sb. 【課題】信頼性の高い半導体装置の製造方法を提供すること。【解決手段】実施形態に係る半導体装置の製造方法は、導電領域および絶縁領域が露出している第１の接合面Ｓａを有する下層部１１ａを形成する工程と、少なくとも導電領域が露出している第２の接合面Ｓｂを有する上層部１１ｂを形成する工程と、少なくとも第１の接合面Ｓａにおいて露出する絶縁領域のうち、導電領域の周囲を含む一部領域を導電領域の表面よりも低くなるように選択的にエッチングを行う工程と、第１の接合面Ｓａの一部領域が第２の接合面Ｓｂに接触しないように、第１の接合面Ｓａと第２の接合面Ｓｂとを接合する工程と、を備える。【選択図】図８