MANUFACTURING METHOD OF PHASE CHANGE MEMORY AND INITIALIZING METHOD OF PHASE CHANGE MEMORY

• Main Authors: SHINTANI TOSHIMICHI, SOEYA SUSUMU
• Format: Patent
• Language: English; Japanese
• Published: 22.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PROBLEM TO BE SOLVED: To solve the problem that, in order to operate a superlattice phase change memory while saving power under an operation resistive state, it is necessary to change a resistive state of a recording and reproducing film from an initial resistive state to an operation resistive state.SOLUTION: Among a plurality of memory cells, in a memory cell of which the initial resistive state of the recording and reproducing film is out of a range of a predetermined resistance value, a resistive state of the recording and reproducing film is initialized from the initial resistive state to the operation resistive state. Specifically, in the case where a resistance value in the initial resistive state is higher than a resistance value in the operation resistive state, a voltage pulse for changing the resistive state of the recording and reproducing film from the initial resistive state to the operation resistive state is applied. In the case where the resistance value in the initial resistive state is lower than the resistance value in the operation resistive state, on the other hand, a voltage pulse for changing the resistive state of the recording and reproducing film from the initial resistive state to the operation resistive state is applied. 【課題】超格子相変化メモリを動作抵抗状態にして低電力動作をさせるためには、記録再生膜の抵抗状態を初期抵抗状態から動作抵抗状態にする必要がある。【解決手段】複数のメモリセルのうち、記録再生膜の初期抵抗状態が所定抵抗値の範囲外にあるメモリセルにおいて、記録再生膜の抵抗状態を前記初期抵抗状態から前記動作抵抗状態に初期化する。具体的には、初期抵抗状態の抵抗値が動作抵抗状態の抵抗値よりも高い場合、記録再生膜の抵抗状態を初期抵抗状態から動作抵抗状態にするための電圧パルスを印加する。一方、初期抵抗状態の抵抗値が動作抵抗状態の抵抗値よりも低い場合、記録再生膜の抵抗状態を初期抵抗状態から動作抵抗状態にするための電圧パルスを印加する。【選択図】図１７