MANUFACTURING METHOD OF HEXAGONAL SEMICONDUCTOR PLATE CRYSTAL

• Main Authors: UCHIDA HIROBUMI, OKANO KAZUO
• Format: Patent
• Language: English; Japanese
• Published: 18.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

PROBLEM TO BE SOLVED: To provide a method capable of efficiently manufacturing a hexagonal semiconductor plate crystal with little warpage.SOLUTION: The method of efficiently manufacturing a hexagonal semiconductor plate crystal is a method to manufacture a plate crystal by cutting a hexagonal semiconductor crystal 31 using a crystal cutting wire W while shifting the crystal cutting wire relative to the hexagonal semiconductor crystal to satisfy the conditions: 25°<α≤90°and =90°±5°[α is an angle formed by a c-axis of the hexagonal semiconductor crystal and a normal line of a crystal plane cut by the wire; is an angle formed by a reference axis of the c-axis of the hexagonal semiconductor crystal which is vertically projected on the crystal plane cut by the wire and the cutting direction]. 【課題】反りが小さい六方晶系半導体板状結晶を効率良く製造する方法を提供すること.【解決手段】結晶切断用ワイヤーＷにより六方晶系半導体結晶３１を切削して板状結晶を製造する方法であって、前記六方晶系半導体結晶に対して２５?＜α ９０?および ＝９０??５?［αは六方晶系半導体結晶のｃ軸とワイヤーにより切り出される結晶面の法線とがなす角度であり、 は六方晶系半導体結晶のｃ軸をワイヤーにより切り出される結晶面上に垂直投影した基準軸と切削方向とがなす角度である。］の各条件を満たすように前記結晶切断用ワイヤーを移動させて切削することを特徴とする六方晶系半導体板状結晶の製造方法。【選択図】図７