LEAD FRAME SUBSTRATE AND LEAD FRAME SUBSTRATE MANUFACTURING METHOD

• Main Author: MANIWA SUSUMU
• Format: Patent
• Language: English; Japanese
• Published: 11.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a lead frame substrate and a lead frame substrate manufacturing method, which inhibit generation of thick resin burrs when an electronic substrate is manufactured often by filling a metal frame having a metal removed part by etching, half etching with a resin in transfer molding thereby to improve quality and yield of the substrate.SOLUTION: A lead frame substrate comprises a die pad 7 for placing a semiconductor element and a lead 4 for connecting an electrode of the semiconductor element with an electrode of an external circuit, in which each of thicknesses of ends of the lead 4 on the die pad side and on the opposite side to the die pad side is equivalent to a thickness of a metal base to be used and a thickness of the lead in another region is formed thinner than each of the thicknesses of the ends of the lead on the die pad side and on the opposite side to the die pad side by half etching the metal base from a rear face, and a width of the end of the lead on the die pad side is formed narrower than a width of the end of the lead on the opposite side to the die pad side. 【課題】エッチング、ハーフエッチングにより金属除去部を作った金属フレームに、多くの場合、トランスファーモールド工法にて樹脂を充填して電子基板を作製する際に、厚い樹脂バリの発生を抑え、基板の品質、歩留まりを上げるリードフレーム型基板およびリードフレーム型基板の製造方法を提供する。【解決手段】半導体素子を搭載するためのダイパッド７と、前記半導体素子の電極と外部回路の電極を接続するためのリード４とを備えてなり、前記リード４の前記ダイパッド側の端部とその逆側の端部の厚みが、使用する金属基材の厚みと同一であり、それ以外のリードの厚みは裏面から金属基材をハーフエッチングすることでダイパッド側とその逆側の端部のリードの厚さより薄く、前記ダイパッド側の端部のリードの幅は、その逆側の端部のリードの幅より狭くする。【選択図】図１