SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURING METHOD

• Main Authors: NIHEI NORIKO, SAITO TATSUMA
• Format: Patent
• Language: English; Japanese
• Published: 04.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting device of high performance and high luminous efficiency, in which optical crosstalk to the outside of an element region in the device to a large extent.SOLUTION: A semiconductor light emitting device manufacturing method comprises: a process of adjacently arranging on a mounting substrate 11, at least one semiconductor light emitting element 20, 30 and electrode pad 12A, 12B in parallel with each other; a process of forming a sacrificial layer 13 on the electrode pad; a process of forming a phosphor layer on the mounting substrate so as to embed the electrode pad and at least one semiconductor light emitting element; a process of partially removing the phosphor layer on the electrode pad; and a process of irradiating laser beams on the sacrificial layer to remove the sacrificial layer to expose the electrode pad. 【課題】装置内における素子領域外への光のクロストークが大幅に抑制された高性能かつ高発光効率の半導体発光装置の製造方法を提供する。【解決手段】搭載基板１１上に少なくとも１つの半導体発光素子２０，３０及び電極パッド１２Ａ，１２Ｂを互いに隣接して並置する工程と、電極パッド上に犠牲層１３を形成する工程と、搭載基板上に電極パッド及び少なくとも１つの半導体発光素子を埋設するように蛍光体層を形成する工程と、電極パッド上の蛍光体層を部分的に除去する工程と、犠牲層にレーザ光を照射して犠牲層を除去し、電極パッドを露出させる工程と、を含む。【選択図】図１