STRESS DETECTION ELEMENT AND STRESS DETECTION METHOD

• Main Author: USUI TAKAHIDE
• Format: Patent
• Language: English; Japanese
• Published: 28.05.2015
• Subjects: BASIC ELECTRIC ELEMENTS; DEAF-AID SETS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS; MEASURING; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES; MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PHYSICS; PUBLIC ADDRESS SYSTEMS; SEMICONDUCTOR DEVICES; TESTING; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a stress detection element and a stress detection method that enable electrical detection of stress applied to a thin film.SOLUTION: A stress detection element is configured such that a fixed first electrode part 13b and a second electrode part 15b which is integrated with a measured thin film 16 are disposed through an air gap 21, and the second electrode part is supported to laterally rotate in response to stress of the thin film; consequently, when the stress of the thin film is a prescribed value, a position of the first electrode part is substantially the same as that of the second electrode part relative to each other at all times, and a value of capacitance between the first electrode part and the second electrode part is a prescribed value; and however, when the stress of the thin film is varied, a position of the first electrode part is relatively varied from that of the second electrode part, and the value of capacitance between the first electrode part and the second electrode part is shifted from the prescribed value, so that a stress variation of the thin film can be detected. 【課題】薄膜に加わる応力を電気的に検知することができる応力検知用素子および応力検知方法を提供する。【解決手段】固定されてる第１の電極部１３ｂ、被測定用の薄膜１６と一体となっている第２の電極部１３ａがエアギャップ２１を介して配置されており、第２の電極部は、薄膜の応力に応じて左右に回転するように支持されている。その結果、薄膜の応力が所定の場合には、第１の電極部と第２の電極部の相対位置は常にほぼ等しくなり、第１の電極部と第２の電極部との間の容量値は所定の値となる。しかし、薄膜の応力が変化した場合、第１の電極部と第２の電極部の相対位置が変化し、第１の電極部と第２の電極部との間の容量値は、所定の値からずれ、薄膜の応力変化を検知できる構成となっている。【選択図】図１