POLYPHENYLENE SULFIDE FILM FOR ELECTRIC INSULATION

• Main Authors: YOSHIDA SHOHEI, HIGASHIOJI TAKUJI, WAKAHARA YOKO
• Format: Patent
• Language: English; Japanese
• Published: 28.05.2015
• Subjects: AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; BASIC ELECTRIC ELEMENTS; CABLES; CHEMISTRY; COMPOSITIONS BASED THEREON; CONDUCTORS; ELECTRICITY; GENERAL PROCESSES OF COMPOUNDING; INSULATORS; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; PERFORMING OPERATIONS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; THEIR PREPARATION OR CHEMICAL WORKING-UP; TRANSPORTING; WORKING-UP

PROBLEM TO BE SOLVED: To provide a thin film polyphenylene sulfide film for electric insulation having excellent voltage resistance.SOLUTION: A biaxially oriented polyphenylene sulfide film has ash content in the range of 10-50 mass% and specific gravity in the range of 0.5-1.2. The biaxially oriented polyphenylene sulfide film has a void in the film and has a film cross-sectional structure satisfying the following conditions (1)-(3): (1) void maximum thickness being 0.2-3 μm; (2) standard deviation in void thickness being 0-0.7 μm; and (3) void number in thickness direction being 10-60/20 μm. 【課題】耐電圧性に優れた電気絶縁用の薄膜ポリフェニレンスルフィドフィルムを提供すること。【解決手段】灰分が１０〜５０質量％の範囲にあり、比重が０．５〜１．２の範囲にある二軸配向ポリフェニレンスルフィドフィルムであって、フィルム中にボイドを有し、フィルムの断面構造が下記（１）〜（３）を満たすことを特徴とする。（１）ボイドの最大厚みが０．２〜３μｍ（２）ボイド厚みの標準偏差が０〜０．７μｍ（３）厚み方向のボイド数が１０〜６０個／２０μｍ【選択図】なし