CONTROL OF IMPEDANCE OF RF DELIVERY PATH

PROBLEM TO BE SOLVED: To provide control of the impedance of an RF transmission path to obtain uniformity of plasma etching or depositing.SOLUTION: A plasma system includes: an RF generator 225; a matchbox 208 including an impedance matching circuit, which is coupled to the RF generator 225 via an R...

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Bibliographic Details
Main Authors LUC ALBAREDE, RAJINDER DHINDSA, KEN LUCCHESI, ALEXEI MARAKHTANOV
Format Patent
LanguageEnglish
Japanese
Published 21.05.2015
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Summary:PROBLEM TO BE SOLVED: To provide control of the impedance of an RF transmission path to obtain uniformity of plasma etching or depositing.SOLUTION: A plasma system includes: an RF generator 225; a matchbox 208 including an impedance matching circuit, which is coupled to the RF generator 225 via an RF cable 212A; a plasma reactor 214 including a chuck (lower electrode) 224, coupled to the matchbox 208 via an RF line (RF rod) 216A; a phase adjusting circuit (filter) 218 coupled to an RF supply path 220 between the impedance matching circuit and the chuck 224, where the phase adjusting circuit 218 has a first end coupled to the RF supply path 220 and a second end 270B that is grounded; and a controller coupled to the phase adjusting circuit 218 and used for changing a parameter of the phase adjusting circuit 218 to control the impedance of the RF supply path 220 on the basis of a tune recipe. 【課題】プラズマエッチング又は蒸着の均一性を得るためのRF伝送路のインピーダンスの制御を提供する。【解決手段】RF発生器225と、RFケーブル212Aを通じてRF発生器225に結合されたインピーダンス整合回路を含む整合ボックス208と、RF線路(RFロッド)216Aを通じて整合ボックス208に結合された、チャック(下部電極)224を含むプラズマリアクタ214であって、プラズマリアクタ214と、前記インピーダンス整合回路とチャック224との間でRF供給路220に結合された位相調整回路(フィルタ)218であって、RF供給路220に結合された第1の端と、接地された第2の端270Bとを有する位相調整回路218と、位相調整回路218に結合され、調節レシピに基づいて位相調整回路218のパラメータを変化させてRF供給路220のインピーダンスを制御するためのコントローラと、を備える。【選択図】図4A
Bibliography:Application Number: JP20140190836