METHOD FOR MANUFACTURING MULTIPLE-OXIDE SINGLE CRYSTAL BY USING CRUCIBLE MADE OF IRIDIUM, AND METHOD FOR MANUFACTURING MULTIPLE-OXIDE MATERIAL BY USING CRUCIBLE MADE OF PLATINUM

• Main Authors: DOBASHI DAISUKE, SHIMIZU JUICHI, SHO YOSHIHIKO
• Format: Patent
• Language: English; Japanese
• Published: 18.05.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method or the like for manufacturing a multiple-oxide single crystal such as a garnet-group single crystal capable of suppressing the early formation of cracks in an iridium crucible, thereby to elongate the lifetime of the crucible.SOLUTION: In a method for manufacturing a multiple-oxide single crystal which includes accommodating a material of a multiple-oxide in an iridium crucible arranged in a growth furnace and growing the multiple-oxide single crystal from a material molten liquid after the material of the multiple-oxide single crystal has been molten, there is used a material of a complex oxide in which a Pt (platinum) concentration contained in the material is less than 60 ppm. In the case where the Pt concentration contained in the material is less than 60 ppm, the diffusion of the Pt impurity into the iridium making the crucible is suppressed so that the formation of a crack in the iridium crucible is prevented. 【課題】イリジウム製坩堝の早期におけるクラックの発生を抑制し、該坩堝の長寿命化が図られるガーネット系単結晶等複合酸化物単結晶の製造方法等を提供する。【解決手段】育成炉内に配置されたイリジウム製坩堝に複合酸化物の原料を収容し、該複合酸化物の原料を融解させた後、原料融液から複合酸化物単結晶を育成する複合酸化物単結晶の製造方法において、原料に含まれるＰｔ（白金）濃度が６０ｐｐｍ未満である複合酸化物の原料を用いることを特徴とする。原料に含まれるＰｔ濃度が６０ｐｐｍ未満である場合、坩堝を構成するイリジウム中へのＰｔ不純物の拡散が抑制されるためイリジウム製坩堝におけるクラックの発生が防止される。【選択図】なし