SEMICONDUCTOR DEVICE

• Main Authors: MARUYAMA HODAKA, GOTO HIROMITSU, OIKAWA YOSHIAKI, YAMAZAKI SHUNPEI, KAWAE DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 14.05.2015
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin film transistor which uses an oxide semiconductor and has excellent electric characteristics.SOLUTION: In a semiconductor device, an In-Sn-O oxide semiconductor layer 403 containing SiOx is used for a channel formation region, and in order to reduce contact resistance with a wiring layer composed of a metal material having a low electric resistance value, a source region or a drain region 404 is provided between the source electrode layer and a drain electrode layer, and the In-Sn-O oxide semiconductor layer containing SiOx. The source region or the drain region, and a pixel region use an In-Sn-O oxide semiconductor layer 408 without containing SiOx in the same layer. 【課題】酸化物半導体層を用い、電気特性の優れた薄膜トランジスタを備えた半導体装置を提供する。【解決手段】チャネル形成領域にＳｉＯｘを含むＩｎ−Ｓｎ−Ｏ系酸化物半導体層403を用い、電気抵抗値の低い金属材料からなる配線層とのコンタクト抵抗を低減するため、ソース電極層及びドレイン電極層と上記ＳｉＯｘを含むＩｎ−Ｓｎ−Ｏ系酸化物半導体層との間にソース領域又はドレイン領域404を設ける。ソース領域又はドレイン領域、及び画素領域は同一層のＳｉＯｘを含まないＩｎ−Ｓｎ−Ｏ系酸化物半導体層408を用いる。【選択図】図１