SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent deterioration in transistor characteristics caused by halogen.SOLUTION: A semiconductor device comprises: a trench provided on a semiconductor substrate; a gate insulation film which covers an inner surface of the trench; a ba...

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Bibliographic Details
Main Author SUGA AKIHIRO
Format Patent
LanguageEnglish
Japanese
Published 30.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent deterioration in transistor characteristics caused by halogen.SOLUTION: A semiconductor device comprises: a trench provided on a semiconductor substrate; a gate insulation film which covers an inner surface of the trench; a barrier film which covers a surface of the gate insulation film; and a metal film which covers a surface of the barrier film and buries the trench. The barrier film includes a non-halogen-containing layer which contacts the gate insulation film and does not contain halogen. 【課題】ハロゲン元素に起因したトランジスタの特性劣化を防止することのできる半導体装置を提供する。【解決手段】半導体装置は、半導体基板に設けられたトレンチと、トレンチの内面を覆うゲート絶縁膜と、ゲート絶縁膜の表面を覆うバリヤ膜と、バリヤ膜の表面を覆い上記トレンチを埋設する金属膜と、を具備し、バリヤ膜は、ゲート絶縁膜に接しハロゲン元素を含有しないハロゲン非含有層を含んで構成される。【選択図】図２
Bibliography:Application Number: JP20130222224