PLASMA PROCESSING APPARATUS

• Main Authors: ISOZAKI SHINICHI, HASHIMOTO TAKAHISA, SAKAI YOSUKE, YOKOGAWA KATANOBU, MORI MASASHI
• Format: Patent
• Language: English; Japanese
• Published: 30.04.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of preventing magnetic field interference between adjacent processing chambers by suppressing magnetic field leakage from a vacuum processing chamber of the plasma processing apparatus, and stably performing uniform processing.SOLUTION: A plasma processing apparatus comprises: a vacuum container having processing gas supply means, evacuation means, high-frequency introduction means, and magnetic field generating means. The apparatus transforms processing gas supplied by the processing gas supply means, which is caused by interaction between high frequency introduced by the high-frequency introduction means and magnetic field created by the magnetic field generating means, into plasma in the vacuum container, and processes a sample to be processed. A plurality of adjacent vacuum containers and a common placing means of sample to be processed, which is provided for placing the sample to be processed in each of the vacuum containers, are arranged in a multiple chamber structure, and a magnetic material shield covers an area around a side surface of the vacuum container positioned below the magnetic field generating means. 【課題】プラズマ処理装置の真空処理室からの磁場漏れを抑制することで、隣接する処理室間の磁場干渉を防ぎ、安定して均一な処理が可能なプラズマ処理装置を提供する。【解決手段】真空容器内に、処理ガス供給手段と、真空排気手段と、高周波導入手段と、磁場発生手段とを有する真空容器を備え、該高周波導入手段により導入される高周波と該磁場発生手段により生成される磁場との相互作用によって該処理ガス供給手段により供給される処理ガスを該真空容器内でプラズマ化して被加工試料を処理するプラズマ処理装置であって、複数台隣接する真空容器と該各真空容器内に被加工試料を設置するために設けた共通の被加工試料設置手段とをマルチチャンバ構造に配置し、磁性材シールドにより磁場発生手段の下方に位置する真空容器の側面周辺を覆うものである。【選択図】図３