SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SEMICONDUCTOR BUFFER STRUCTURE

• Main Authors: PARK YOUNG-SOO, KIN CHUSEI, KIM JAE KYOON, TAK YOUNG-JO, KIM JUN-YOUN, CHAE SU-HEE
• Format: Patent
• Language: English; Japanese
• Published: 27.04.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a semiconductor buffer structure, a semiconductor device including the same, and a method of manufacturing the semiconductor device using the semiconductor buffer structure.SOLUTION: A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of BAlInGaN (0≤x<1, 0<y<1, 0≤z<1, 0≤x+y+z<1) having a uniform composition ratio, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer. 【課題】半導体バッファ構造体、それを含む半導体素子及び半導体バッファ構造体を利用した半導体素子の製造方法を提供する。【解決手段】シリコン基板；シリコン基板上に形成された核生成層；及び核生成層上に形成されたものであり、組成比が一定のＢｘＡｌｙＩｎｚＧａ１−ｘ−ｙ−ｚＮ（０ ｘ＜１、０＜ｙ＜１、０ ｚ＜１、０ ｘ＋ｙ＋ｚ＜１）からなる第１層と、第１層上に、核生成層と同一の材質から形成された第２層と、第２層上に、第１層と同一の材質及び組成比によってなる第３層と、を含むバッファ層；を含む。【選択図】図１