POLISHING COMPOSITION

• Main Author: TAMADA SHUICHI
• Format: Patent
• Language: English; Japanese
• Published: 13.04.2015
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a polishing composition excellent in storage stability in a chemical mechanical polishing (CMP) for polishing target to be polished such as a layer containing IV group materials in a LSI manufacturing process.SOLUTION: There are provided a polishing composition containing an abrasive grain and an oxidant containing a halogen atom and having a value of sum of the number of a silanol group having the abrasive grain in the polishing composition (A) (unit:number) divided by the concentration of the oxidant in the polishing composition (B) (unit:mass%), (A/B) of 8 mass×10or less, and a polishing method thereof. There is provided the polishing composition where a target to be polished is a layer containing IV group materials and the oxidant is 0.0001 to 0.5 mass%. 【課題】ＬＳＩ製造工程のＩＶ族材料を含む層などの研磨対象物を研磨する化学機械研磨（ＣＭＰ）法において、保管安定性に優れた研磨用組成物を提供する。【解決手段】砥粒とハロゲン原子を含有する酸化剤と、を含み、研磨用組成物中の前記砥粒が有するシラノール基数の総和（Ａ）（単位：個）を研磨用組成物中の前記酸化剤の濃度（Ｂ）（単位：質量％）で除した値（Ａ／Ｂ）が、８?１０２３以下である、研磨用組成物とそれを用いた研磨方法である。研磨対象物がＩＶ族材料を含む層であり、前記酸化剤が０．０００１〜０．５質量％である、研磨用組成物。【選択図】なし