SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

• Main Authors: TAKEMIYA SATOSHI, TOMONAGA HIROYUKI, YOSHIDA IORI
• Format: Patent
• Language: English; Japanese
• Published: 26.03.2015
• Subjects: ADHESIVES; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SKI WAXES; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal substrate suitable for epitaxial growth of a high-quality semiconductor layer with no crystal defect.SOLUTION: A silicon carbide single crystal substrate obtained by supplying an abrasive-free polishing liquid to an abrasive-free polishing pad to bring a polished surface of the silicon carbide single crystal substrate in contact with the polishing pad and polishing by relative motion of both of the silicon carbide single crystal substrate and the polishing pad comprises a principal surface having an atomic step terrace structure composed of an atomic step and a terrace which are derived from a crystalline structure. In the atomic step terrace structure, mean line roughness at a front end line part of the atomic step, which is obtained from an AFM (Atomic Force Microscope) image has a ratio of 20% and less with respect to a height of the atomic step. 【課題】結晶欠陥がない高品質の半導体層をエピタキシャル成長させるために適した炭化ケイ素単結晶基板を提供する。【解決手段】砥粒を内包しない研磨パッドに、砥粒を含まない研磨液を供給し、炭化ケイ素単結晶基板の被研磨面と前記研磨パッドとを接触させ、両者間の相対運動により研磨して得られた基板であって、結晶構造に由来する原子ステップとテラスとからなる原子ステップ・テラス構造を有する主面を備え、前記原子ステップ・テラス構造において、ＡＦＭ（原子間力顕微鏡）像から求められた前記原子ステップのフロント端線部の平均線粗さが、前記原子ステップの高さに対して２０％以下の割合であることを特徴とする炭化ケイ素単結晶基板を提供する。【選択図】図１