SEMICONDUCTOR DEVICE

• Main Authors: UCHIHARA TSUKASA, ONO TETSUYA, YASUMOTO YASUAKI, SAITO YASUNOBU, NAKA TOSHIYUKI, YOSHIOKA HIROSHI, FUJIMOTO HIDETOSHI, YANASE NAOKO, ONO YU, MASUKO SHINGO
• Format: Patent
• Language: English; Japanese
• Published: 23.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve voltage-withstanding characteristics by inhibiting flow of a leakage current caused by an inversion layer, an accumulation layer, and dislocation.SOLUTION: A semiconductor device comprises: a semiconductor substrate 1; and a first film 2 formed on the semiconductor substrate 1. The semiconductor device further comprises: a first semiconductor layer 3 which is formed on the first film 2 and has a first conductivity type or an intrinsic type; and a second semiconductor layer 4 which is formed on the first semiconductor layer 3 and has a first conductivity type or an intrinsic type. The semiconductor device further comprises second conductivity type third semiconductor layers 11, 12 which have: a first upper part S3 which contacts the first semiconductor layer 3; a second upper part S4 which contacts the first film; a first side part S5 lying between the first upper part S3 and the second upper part S4; and a second side part S6 lying between the second upper part S4 and a lower part S2 of the semiconductor substrate. 【課題】反転層、蓄積層、および転位に起因するリーク電流の流れを抑制して、耐圧を向上させることが可能な半導体装置を提供する。【解決手段】半導体装置は、半導体基板１と、半導体基板１上に形成された第１の膜２とを備える。さらに、装置は、第１の膜２上に形成された第１導電型またはイントリンシック型の第１半導体層３と、第１半導体層３上に形成された第１導電型またはイントリンシック型の第２半導体層４とを備える。さらに、装置は、第１半導体層３に接する第１の上部Ｓ３と、第１の膜に接する第２の上部Ｓ４と、第１の上部Ｓ３と第２の上部Ｓ４との間に位置する第１の側部Ｓ５と、第２の上部Ｓ４と半導体基板の下部Ｓ２との間に位置する第２の側部Ｓ６と、を有する第２導電型の第３半導体層１１、１２を備える。【選択図】図１