LIQUID CRYSTAL DISPLAY PANEL

PROBLEM TO BE SOLVED: To maintain a good operation of a peripheral circuit in a liquid crystal display panel that has a peripheral circuit using an oxide thin film transistor and is subjected to a photo-alignment treatment.SOLUTION: The liquid crystal display panel includes: a transparent substrate...

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Main Authors UEMURA NORIHIRO, KANEKO TOSHITERU, MIYAKE HIDEKAZU, YAMAGUCHI YOHEI, SUZUMURA ISAO
Format Patent
LanguageEnglish
Japanese
Published 23.03.2015
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Summary:PROBLEM TO BE SOLVED: To maintain a good operation of a peripheral circuit in a liquid crystal display panel that has a peripheral circuit using an oxide thin film transistor and is subjected to a photo-alignment treatment.SOLUTION: The liquid crystal display panel includes: a transparent substrate 1 (SUB 1) on which an oxide thin film transistor is disposed in a periphery of a pixel part PA where a pixel electrode is disposed, allowing the oxide thin film transistor to control the pixel electrode; and an alignment film 8 (AF) disposed in the pixel part for aligning a liquid crystal, in which the alignment film is subjected to a photo-alignment treatment by irradiation with UV rays. In the liquid crystal display panel, a UV-absorbing layer that absorbs UV rays is disposed to cover the oxide thin film transistor. More specifically, for example, the alignment film 8 is used as the UV-absorbing layer; and UV rays for the photo-alignment treatment of the alignment film 8 in the pixel part PA is absorbed by the alignment film 8 disposed as the UV-absorbing layer in a peripheral circuit part SL that controls the pixel electrode, so as to suppress a threshold voltage shift in the oxide thin film transistor. 【課題】 酸化物薄膜トランジスタを用いた周辺回路を有し且つ光配向が適用される液晶表示パネルにおいて、周辺回路の良好な動作を維持する。【解決手段】 画素電極を配置した画素部PAの周辺に当該画素電極の制御を行なう酸化物薄膜トランジスタを配置した透明基板1(SUB1)と、前記画素部に設けられる液晶を配向させる配向膜8(AF)と、を有し、紫外線の照射により前記配向膜を光配向処理する液晶表示パネルにおいて、紫外線を吸収する紫外線吸収層を、前記酸化物薄膜トランジスタを覆って設けた。より具体的には、紫外線吸収層として例えば配向膜8を用い、画素部PAの配向膜8を光配向処理する紫外線を、画素電極の制御を行なう周辺回路部SLでは、紫外線吸収層として設けた配向膜8で吸収し、酸化物薄膜トランジスタの閾値電圧シフトを抑制する。【選択図】 図3
Bibliography:Application Number: JP20130189276